 English |
|
|
|
|
|
|
|
| FDT55AN06LA0 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET | |||
| |||
|
February 2008
FDT55AN06LA0
tm
N-Channel PowerTrench® MOSFET
60V, 11A, 55m:
Features
⢠RDS(on) = 44m: ( Typ.)@ VGS = 5V, ID = 11A
⢠Qg(tot) = 7.6nC( Typ.),@ VGS = 5V.
⢠Low Miller Charge
⢠Low QRR Body Diode
⢠UIS Capability
⢠RoHS compliant
Applications
⢠Motor / Body load control
⢠Power train management
⢠DC-AC converters
⢠Distributed power architectures and VRMs
D
D
S
G
D
SOT-22 3
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC, VGS = 10V)
-Continuous (TC = 25oC, VGS = 5V)
-Continuous (TC = 10oC, VGS = 5V)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 2)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8â from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
*When mounted on the minimum pad size recommended (PCB Mount)
S
Ratings
60
±20
12.1
11
7
36
34
8.9
0.071
-55 to +150
300
Ratings
14
100
Units
V
V
A
A
mJ
W
W/oC
oC
oC
Units
oC/W
©2008 Fairchild Semiconductor Corporation
1
FDT55AN06LA0 Rev. A
www.fairchildsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese