FDT458P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

June 2001
FDT458P
30V P-Channel PowerTrench^® MOSFET
General Description
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
Applications
• Battery chargers
• Motor drives
Features
• 3.4 A, –30 V. RDS(ON) = 130 mΩ @ VGS = 10 V
RDS(ON) = 200 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge (2.5 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
widely used surface mount package
D
D
D
D
S
SOT-223
D
G
G
D
S
SOT-223* ^G
(J23Z)
S
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
458P
FDT458P
13’’
Ratings
– 30
±20
3.4
10
3.0
1.3
1.1
–55 to +150
42
12
Tape width
12mm
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)