FDT457N Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – N-Channel Enhancement Mode Field Effect Transistor

August 1998
FDT457N
N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide superior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.
Features
5 A, 30 V. R_DS(ON) = 0.06 Ω @ V_GS = 10 V
R_DS(ON) = 0.090 Ω @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely used
surface mount package.
SuperSOT^TM-3
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
D
D
SOT-223
S
D
G
G
D
S
SOT-223* ^G
(J23Z)
D
S
G
S
Absolute Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage - Continuous
I_D
Maximum Drain Current - Continuous (Note 1a)
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
* Order option J23Z for cropped center drain lead.
(Note 1a)
(Note 1)
© 1998 Fairchild Semiconductor Corporation
FDT457N
30
±20
5
16
3
1.3
1.1
-65 to 150
42
12
Units
V
V
A
W
°C
°C/W
°C/W
FDT457N Rev.C