FDT434P_11 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET

April 2011
FDT434P
P-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
Applications
• Low Dropout Regulator
• DC/DC converter
• Load switch
• Motor driving
Features
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
• Low gate charge (13nC typical)
• High performance trench technology for extremely
low RDS(ON) .
• High power and current handling capability in a
widely used surface mount package.
D
SOT-22 3
S
D
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
434
FDT434P
13’’
D
G
D
S
Ratings
–20
±8
–6
–30
3
1.3
1.1
-55 to +150
42
12
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDT434P Rev. C2
www.fairchildsemi.com