FDT3612 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 100V N-Channel PowerTrench MOSFET

March 2001
FDT3612
100V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R_DS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor driving
Features
• 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V
RDS(ON) = 130 mΩ @ VGS = 6 V
• Fast switching speed
• Low gate charge (14nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
widely used surface mount package
D
D
D
D
S
SOT-22 3
D
G
G
D
S
S
SOT-223* ^G
G
(J2 3 Z )
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
3612
FDT3612
13’’
Ratings
100
±20
3.7
20
3.0
1.3
1.1
–55 to +150
42
12
Tape width
12mm
S
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
FDT3612 Rev. C1 (W)