FDS9945 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 60V N-Channel PowerTrench MOSFET

February 2001
FDS9945
60V N-Channel PowerTrench^® MOSFET
General Description
These N Channel Logic Level MOSFET have been
designed specifically to improve the overall efficiency of
DC/DC converters using either synchronous or
conventional switching PWM controllers.
The MOSFET feature faster switching and lower gate
charge than other MOSFET with comparable RDS(on)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
• 3.5 A, 60 V.
RDS(ON) = 0.100Ω @ VGS = 10 V
RDS(ON) = 0.200Ω @ VGS = 4.5V
• Optimized for use in switching DC/DC converters
with PWM controllers
• Very fast switching
• Low gate charge.
D^D1DD1
D^D2
D^D2
SO-8
Pin 1 SO-8
S 1GG¹
S_S2G^{S2 S}
5
4
6
Q1
3
7
2
Q2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9945
FDS9945
13’’
Ratings
60
±20
3.5
10
2
1.6
1.0
-55 to +175
Units
V
V
A
W
°C
78 (steady state), 50 (10 sec)
135
40
°C/W
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2001 Fairchild Semiconductor Corporation
FDS9945 Rev B(W)