FDS9936A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

May 1998
FDS9936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to provide superior switching
performance and minimize on-state resistance. These devices
are particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
5.5 A, 30 V. R_DS(ON) = 0.040 Ω @ V_GS = 10 V,
R_DS(ON) = 0.060 Ω @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D2
D2
D1
D1
F9D9S36A
SO-8
G2
S2
pin 1
G1
S1
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS9936A
30
±20
5.5
20
2
1.6
1
0.9
-55 to 150
78
40
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS9936A Rev.B