FDS9934C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Complementary

March 2006
FDS9934C
Complementary
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: 6.5 A, 20 V. RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 43 mΩ @ VGS = 2.5 V.
• Q2: –5 A, –20 V, RDS(ON) = 55 mΩ @ VGS = –4.5 V
RDS(ON) = 90 mΩ @ VGS = –2.5 V
D^D2
D^D2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
4
6
3
Q1
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS9934C
Device
FDS9934C
Reel Size
13’’
Ratings
Q1
Q2
20
–20
±10
±12
6.5
–5
20
–30
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS9934C Rev D(W)