FDS9933BZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench® MOSFET

March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench^® MOSFET
tm
-20V, -4.9A, 46mΩ
Features
General Description
„ Max r_DS(on) = 46mΩ at V_GS = -4.5V, I_D = -4.9A
„ Max r_DS(on) = 69mΩ at V_GS = -2.5V, I_D = -4.0A
„ Low gate charge (11nC typical).
„ High performance trench technology for extremely low r_DS(on).
„ HBM ESD protection level >3kV (Note 3).
„ RoHS Compliant
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench^® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
„ Battery Charging
„ Load Switching
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
Q 12
D1 7
D1 8
Q 21
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
T_A = 25°C
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-4.9
-30
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
40
(Note 1a)
78
°C/W
Device Marking
FDS9933BZ
Device
FDS9933BZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS9933BZ Rev.C
www.fairchildsemi.com