FDS9933A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel 2.5V Specified PowerTrench MOSFET

November 1998
FDS9933A
Dual P-Channel 2.5V Specified PowerTrench™ MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• Load switch
• DC/DC converter
• Motor drives
Features
• -3.8 A, -20 V. R_DS(on) = 0.075 Ω @ V_GS = -4.5 V
R_DS(on) = 0.105 Ω @ V_GS = -2.5 V.
• Low gate charge ( 7nC typical ).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(on).
• High power and current handling capability.
D2
D2
D1
D1
SO-8
G2
S2
pin 1
G1
S1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings ^TA^{=25oC unless otherwise noted}
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, T_stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
FDS9933A
-20
±8
-3.8
-20
2.0
1.6
1.0
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9933A
FDS9933A
13’’
Tape width
12mm
Quantity
2500 units
©1998 Fairchild Semiconductor Corporation
FDS9933A Rev. C