FDS9431A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified MOSFET

September 1999
FDS9431A
P-Channel 2.5V Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process has been
especially tailored to minimize on-state resistance and
yet maintain superior switching performance.
Applications
• DC/DC converter
• Power management
• Load switch
• Battery protection
Features
• -3.5 A, -20 V. R_DS(ON) = 0.130 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.180 Ω @ V_GS = -2.5 V.
• Fast switching speed.
• High density cell design for extremely low R_DS(ON).
• High power and current handling capability.
D
D
5
D
D
6
7
G
SS
8
SO-8 S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
RqJA
Thermal Resistance, Junction-to-Ambient
RqJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9431A
FDS9431A
13’’
1999 Fairchild Semiconductor Corporation
4
3
2
1
Ratings
-20
±8
-3.5
-18
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS9431A Rev. A2