FDS9412A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 8A, 21mOhm

February 2006
FDS9412A
N-Channel PowerTrench^® MOSFET
30V, 8A, 21mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switiching PWM
controllers. It has been optimized for low gate charge ,low
r_DS(on) and fast switching speed.
„ Max r_DS(on) = 21mΩ at V_GS = 10V, I_D = 8A
„ Max r_DS(on) = 25mΩ at V_GS = 4.5V, I_D = 6.6A
„ Low gate charge
„ RoHS Compliant
Application
„ DC/DC converters
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (T_A = 25°C, V_GS = 10V, R_θJA = 50°C/W )
-Continuous (T_A = 25°C, V_GS = 4.5V, R_θJA = 50°C/W )
-Pulsed
E_AS
P_D
T_J, T_STG
Single Pulse Avalanche Energy
Power dissipation
Operating and Storage Temperature
(Note 3)
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance , Junction to Case
Thermal Resistance , Junction to Ambient
(Note 1)
(Note 1a)
Package Marking and Ordering Information
Device Marking
FDS9412A
Device
FDS9412A
Package
SO-8
Reel Size
330mm
Ratings
30
±20
8
6.6
30
54
2.5
-55 to 150
25
50
Tape Width
12mm
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS9412A Rev. A1
www.fairchildsemi.com