FDS9412 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Single N-Channel Enhancement Mode Field Effect Transistor

April 2000
FDS9412
Single N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer DC-DC
converter where fast switching, low conduction loss and
high efficiency are needed.
Features
• 7.9 A, 30 V.
RDS(ON) = 22 mΩ @ VGS = 10 V
RDS(ON) = 36 mΩ @ VGS = 4.5 V
• Very low gate charge.
• High switching speed
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
widely used surface mount package.
D
D
D
D
G
SS
SO-8 S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS9412
FDS9412
13’’
5
6
7
8
Ratings
30
±20
7.9
24
2.5
1.2
1.0
-55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDS9412 Rev D(W)