FDS8984 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 7A, 23mOhm

February 2006
FDS8984
N-Channel PowerTrench^® MOSFET
30V, 7A, 23mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
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Features
„ Max r_DS(on) = 23mΩ, V_GS = 10V, I_D = 7A
„ Max r_DS(on) = 30mΩ, V_GS = 4.5V, I_D = 6A
„ Low gate charge
„ 100% R_G tested
„ RoHS Compliant
D^D2DD2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1 _S
S1 S
S
5
4
6 ^Q2
3
7
2
8 ^Q1
1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Pulsed
Parameter
(Note 1a)
E_AS
Single Pulse Avalache Energy
Power Dissipation for Single Operation
P_D
Derate above 25°C
(Note 2)
T_J, T_STG Operating and Storage Temperature
Ratings
30
±20
7
30
32
1.6
13
-55 to 150
Units
V
V
A
A
mJ
W
mW/°C
°C
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
78
(Note 1)
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS8984
Device
FDS8984
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS8984 Rev. A
www.fairchildsemi.com