FDS8978_11 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

FDS8978
N-Channel PowerTrench^® MOSFET
30V, 7.5A, 18mΩ
January 2011
Features
„ r_DS(on) = 18mΩ, V_GS = 10V, I_D = 7.5A
„ r_DS(on) = 21mΩ, V_GS = 4.5V, I_D = 6.9A
„ High performance trench technology for extremely low
r_DS(on)
„ Low gate charge
„ High power and current handling capability
„ 100% Rg Tested
„ RoHS Compliant
D2
D2
D1
D1
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
Applications
„ DC/DC converters
D2 ₅
D2 6
Q2
4 ^G2
3 S2
SO-8
Pin 1
G2
S2
G1
S1
D1 7
D1 8
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 50^oC/W)
Continuous (T_A = 25^oC, V_GS = 4.5V, R_θJA = 50^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2c)
Package Marking and Ordering Information
Device Marking
FDS8978
Device
FDS8978
Package
SO-8
Reel Size
330mm
2 G1
Q1
1 ^S1
Ratings
30
±20
7.5
6.9
49
57
1.6
13
-55 to 150
40
78
135
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
o_C/W
o_C/W
o_C/W
Tape Width
12mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDS8978 Rev. B1
www.fairchildsemi.com