FDS8962C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

June 2006
FDS8962C
Dual N & P-Channel PowerTrench^® MOSFET
Features
■ Q1: N-Channel
7.0A, 30V R_DS(on) = 0.030Ω @ V_GS = 10V
R_DS(on) = 0.044Ω @ V_GS = 4.5V
■ Q2: P-Channel
-5A, -30V R_DS(on) = 0.052Ω @ V_GS = -10V
R_DS(on) = 0.080Ω @ V_GS = -4.5V
■ Fast switching speed
■ High power and handling capability in a widely used surface
mount package
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been especially
tailored to minimize on-state ressitance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
D2
D2
D1
D1
SO-8
Pin 1
G2
S2
S1G1
Q2
5
4
6
3
Q1
7
2
8
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
Q1
Q2
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
30
-30
±20
±20
7
-5
20
-20
2
1.6
1
0.9
-55 to +150
78
40
Package Marking and Ordering Information
Device Marking
FDS8962C
Device
FDS8962C
Reel Size
13”
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
1
FDS8962C Rev. A1
www.fairchildsemi.com