FDS8960C_0511 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET

November 2005
FDS8960C
Dual N & P-Channel PowerTrench^® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 35V R_DS(on) = 0.024Ω @ V_GS = 10V
R_DS(on) = 0.032Ω @ V_GS = 4.5V
• Q2: P-Channel
–5A, –35V R_DS(on) = 0.053Ω @ V_GS = –10V
R_DS(on) = 0.087Ω @ V_GS = –4.5V
• Fast switching speed
• RoHS compliant
D^D2
D^D2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_{DS(Avalanche)}
V_GSS
I_D
P_D
Drain-Source Voltage
Drain-Source Avalanche Voltage (maximum) (Note 3)
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8960C
FDS8960C
13”
©2005 Fairchild Semiconductor Corporation
FDS8960C Rev C1(W)
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
35
–35
40
–40
±20
±25
7
–5
20
–20
2
1.6
1
0.9
–55 to +150
78
40
Units
V
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
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