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FDS8958B Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench® MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
FDS8958B
Dual N & P-Channel PowerTrench® MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
December 2008
Features
Q1: N-Channel
„ Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
„ Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
Q2: P-Channel
„ Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
„ Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
„ HBM ESD protection level > 3.5 kV (Note 3)
General Description
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild Semiconductor's
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Application
„ RoHS Compliant
„ DC-DC Conversion
„ BLU and motor drive inverter
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
Q2
D2 5
D2 6
Q1
D1 7
D1 8
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range
TA = 25 °C
TA = 25 °C
TA = 25 °C
(Note 1a)
(Note 1b)
(Note 4)
Thermal Characteristics
Q1
Q2
30
-30
±20
±25
6.4
-4.5
30
-30
2.0
1.6
0.9
18
5
-55 to +150
Units
V
V
A
W
mJ
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
40
(Note 1a)
78
°C/W
Device Marking
FDS8958B
Device
FDS8958B
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS8958B Rev.B
www.fairchildsemi.com
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