FDS8958A_10 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N & P-Channel PowerTrench MOSFET

February 2010
FDS8958A_F085
tm
Dual N & P-Channel PowerTrench^® MOSFET
General Description
These dual N- and P-Channel enhancement mode
power field effect transistors are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state ressitance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• Q1: N-Channel
7.0A, 30V
R_DS(on) = 0.028Ω @ V_GS = 10V
R_DS(on) = 0.040Ω @ V_GS = 4.5V
• Q2: P-Channel
-5A, -30V
R_DS(on) = 0.052Ω @ V_GS = -10V
R_DS(on) = 0.080Ω @ V_GS = -4.5V
• Fast switching speed
• High power and handling capability in a widely
used surface mount package
• ^{Qualified to AEC Q101}
• RoHS Compliant
D^D2DD2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2
S_S1GS^{1 S}
G
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
EAS
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1c)
Single Pulse Avalanche Energy
(Note 3)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
FDS8958A
Device
FDS8958A_F085
Reel Size
13”
©2010 Fairchild Semiconductor Corporation
1
FDS8958A_F085 Rev. A
Q2
5
4
6
3
Q1
7
2
8
1
Q1
Q2
30
30
±20
±20
7
-5
20
-20
2
2
1.6
1.6
0.9
0.9
54
13
-55 to +150
Units
V
V
A
W
mJ
°C
78
°C/W
40
°C/W
Tape width
12mm
Quantity
2500 units
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