FDS8949 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual N-Channel Logic Level PowerTrench MOSFET

October 2006
FDS8949
tm
Dual N-Channel Logic Level PowerTrench^® MOSFET
40V, 6A, 29mΩ
Features
„ Max r_DS(on) = 29mΩ at V_GS = 10V
„ Max r_DS(on) = 36mΩ at V_GS = 4.5V
„ Low gate charge
„ High performance trench technology for extremely low
r_DS(on)
„ High power and current handling capability
„ RoHS compliant
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild
Semiconductor’s advanced
PowerTrench^® process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
„ Inverter
„ Power suppliers
D2
D2
D1
D1
SO-8
Pin 1
G2
S2
G1
S1
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Drain-Source Avalanche Energy
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
R_θJA
Thermal Resistance-Single operation, Junction to Ambient
R_θJA
Thermal Resistance-Single operation, Junction to Ambient
R_θJC
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
(Note 1)
Device Marking
FDS8949
Device
FDS8949
Reel Size
13’’
Tape Width
12mm
Ratings
40
±20
6
20
26
2
1.6
0.9
-55 to 150
Units
V
V
A
mJ
W
°C
81
135
°C/W
40
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS8949 Rev. B1
www.fairchildsemi.com