FDS8947A Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode Field Effect Transistor

March 1998
FDS8947A
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
Features
-4.0 A, -30 V. R_DS(ON) = 0.052Ω @ V_GS = -10 V
R_DS(ON) = 0.080Ω @ V_GS = -4.5 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D2
D2
D1
D1
F8D9S47A
SO-8
G2
S2
pin 1
G1
S1
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS8947A
-30
-20
- 4.0
-20
2
1.6
1
0.9
-55 to 150
78
40
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS8947A Rev.B