FDS8936S Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

August 1997
FDS8936S
Dual N-Channel Enhancement Mode Field Effect Transistor
GeneralDescription
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to provide superior switching performance
and minimize on-state resistance. These devices are
particularly suited for low voltage applications such as disk
drive motor control, battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Features
Low gate charge.
5.0 A, 30 V. R_DS(ON) = 0.040 Ω @ V_GS = 10 V.
High density cell design for extremely low R . _DS(ON)
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
5
6
7
8
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
© 1997 Fairchild Semiconductor Corporation
FDS8936S
30
±20
5
20
2
1.6
1
0.9
-55 to 150
78
40
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS8936S Rev.C