FDS8936A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Dual N-Channel Enhancement Mode Field Effect Transistor

May 1998
FDS8936A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
6 A, 30 V. R_DS(ON) = 0.028 Ω @ V_GS = 10 V,
R_DS(ON) = 0.040 Ω @ V_GS = 4.5 V.
High density cell design for extremely low R_DS(ON).
High power and current handling capability in a widely
used surface mount package.
Dual MOSFET in surface mount package.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D2
D2
D1
D1
F8D9S36A
SO-8
G2
S2
pin 1
G1
S1
Absolute Maximum Ratings
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
T_A = 25^oC unless otherwise noted
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
© 1998 Fairchild Semiconductor Corporation
5
6
7
8
FDS8936A
30
±20
6
20
2
1.6
1
0.9
-55 to 150
78
40
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
FDS8936A Rev.B