FDS8935 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 mΩ

FDS8935
Dual P-Channel PowerTrench^® MOSFET
-80 V, -2.1 A, 183 mΩ
November 2010
Features
General Description
„ Max r_DS(on) = 183 mΩ at V_GS = -10 V, I_D = -2.1 A
„ Max r_DS(on) = 247 mΩ at V_GS = -4.5 V, I_D = -1.9 A
„ High performance trench technology for extremely low r_DS(on)
„ This P-channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ Load Switch
„ Synchronous Rectifier
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
D2 5₅
D2 6₆
Q2
D1 77
Q1
D1 8⁸
4^{4 G2}
3^{3 S2}
22 G1
1_{1 S1}
SO-8
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-80
±20
-2.1
-10
37
3.1
1.6
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8935
Device
FDS8935
Package
SO-8
(Note 1)
40
(Note 1a)
78
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDS8935 Rev.C
www.fairchildsemi.com