FDS89161LZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A

June 2011
FDS89161LZ
Dual N-Channel PowerTrench^® MOSFET
100 V, 2.7 A, 105 mΩ
Features
General Description
„ Max r_DS(on) = 105 mΩ at V_GS = 10 V, I_D = 2.7 A
„ Max r_DS(on) = 160 mΩ at V_GS = 4.5 V, I_D = 2.1 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ CDM ESD protection level > 2KV typical (Note 4)
„ 100% UIL Tested
This N-Channel logic Level MOSFETs are produced using
Fairchild Semiconductor‘s advanced Power Trench^® process
that has been special tailored to minimize the on-state
resisitance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.
Application
„ DC-DC conversion
„ RoHS Compliant
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 ₅
D2 ₆
Q2
D1 7
Q1
D1 8
4 ^G2
3 ^S2
2 G1
1 S1
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note1a)
Ratings
100
±20
2.7
15
13
31
1.6
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
4.0
(Note 1a)
78
°C/W
Device Marking
FDS89161LZ
Device
FDS89161LZ
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDS89161LZ Rev. C4
www.fairchildsemi.com