FDS8896_07 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

April 2007
FDS8896
tm
N-Channel PowerTrench^® MOSFET
30V, 15A, 6.0mΩ
Features
„ r_DS(on) = 6.0mΩ, V_GS = 10V, I_D = 15A
„ r_DS(on) = 7.3mΩ, V_GS = 4.5V, I_D = 14A
„ High performance trench technology for extremely low
r_DS(on)
„ Low gate charge
„ High power and current handling capability
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
Applications
„ DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2007 Fairchild Semiconductor Corporation
1
FDS8896 Rev. B
www.fairchildsemi.com