FDS8882 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30 V, 9 A, 20.0 mΩ

FDS8882
N-Channel PowerTrench^® MOSFET
30 V, 9 A, 20.0 mΩ
December 2008
Features
General Description
„ Max r_DS(on) = 20.0 mΩ at V_GS = 10 V, I_D = 9 A
„ Max r_DS(on) = 22.5 mΩ at V_GS = 4.5 V, I_D = 8 A
„ High performance trench technology for extremely low r_DS(on)
and fast switching
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
The FDS8882 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance.
Applications
„ Notebook System Regulators
„ DC/DC Converters
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
9
21
32
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS8882
Device
FDS8882
Package
SO8
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS8882 Rev.C
www.fairchildsemi.com