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| FDS8878 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET | |||
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June 2005
FDS8878
N-Channel PowerTrench® MOSFET
30V, 10.2A, 14mâ¦
Features
 rDS(ON) = 14mâ¦, VGS = 10V, ID = 10.2A
 rDS(ON) = 17mâ¦, VGS = 4.5V, ID = 9.3A
 High performance trench technology for extremely low
rDS(ON)
 Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
 High power and current handling capability
Applications
 DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2005 Fairchild Semiconductor Corporation
1
FDS8878 Rev. A1
www.fairchildsemi.com
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