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| FDS8876_07 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 30V, 12.5A, 8.2mΩ | |||
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April 2007
FDS8876
tm
N-Channel PowerTrench® MOSFET
30V, 12.5A, 8.2mâ¦
Features
 rDS(on) = 8.2mâ¦, VGS = 10V, ID = 12.5A
 rDS(on) = 10.2mâ¦, VGS = 4.5V, ID = 11.4A
 High performance trench technology for extremely low
rDS(on)
 Low gate charge
 High power and current handling capability
 RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Applications
 DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2007 Fairchild Semiconductor Corporation
1
FDS8876 Rev. B
www.fairchildsemi.com
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