FDS8876 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

April 2005
FDS8876
N-Channel PowerTrench^® MOSFET
30V, 12.5A, 8.2mΩ
Features
r_DS(ON) = 8.2mΩ, V_GS = 10V, I_D = 12.5A
r_DS(ON) = 10.2mΩ, V_GS = 4.5V, I_D = 11.4A
High performance trench technology for extremely low
r_DS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
Branding Dash
5
1
2
3
4
SO-8
5
4
6
3
7
2
8
1
©2005 Fairchild Semiconductor Corporation
1
FDS8876 Rev. A
www.fairchildsemi.com