FDS8842NZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40 V, 14.9 A, 7.0 mΩ

FDS8842NZ
N-Channel PowerTrench^® MOSFET
February 2009
40 V, 14.9 A, 7.0 mΩ
Features
General Description
„ Max r_DS(on) = 7.0 mΩ at V_GS = 10 V, I_D = 14.9 A
„ Max r_DS(on) = 11.6 mΩ at V_GS = 4.5 V, I_D = 11.6 A
„ HBM ESD protection level of 4.4 kV typical(note 3)
„ High performance trench technology for extremely low r_DS(on)
and fast switching
„ High power and current handling capability
„ Termination is Lead-free and RoHS Compliant
The FDS8842NZ has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r_DS(on) while maintaining excellent switching performance.
Applications
„ Synchronous Buck for Notebook Vcore and Server
„ Notebook Battery
„ Load Switch
D
D
D
D
D
G
D
S
SO-8
G
D
S
S
S
D
S
Pin 1
S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 1b)
Ratings
40
±20
14.9
93
253
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS8842NZ
Device
FDS8842NZ
Package
SO8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
1
FDS8842NZ Rev.C
www.fairchildsemi.com