FDS8817NZ Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 15A, 7.0mohm

March 2007
FDS8817NZ
tm
N-Channel PowerTrench^® MOSFET
30V, 15A, 7.0mΩ
Features
General Description
„ Max r_DS(on) = 7mΩ at V_GS = 10V, I_D = 15A
„ Max r_DS(on) = 10mΩ at V_GS = 4.5V, I_D =12.6A
„ HBM ESD protection level of 3.8kV typical (note 3)
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ RoHS compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench^® process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
D
G
D
S
G
SO-8
S
D
S
S
Pin 1
S
D
S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDS8817NZ
Device
FDS8817NZ
Reel Size
13”
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
Ratings
30
±20
15
60
181
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
(Note 1)
25
(Note 1a)
50
(Note 1b)
125
°C/W
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
1
FDS8817NZ Rev.C
www.fairchildsemi.com