FDS8690 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 14A, 7.6mOhm

January 2006
FDS8690
N-Channel PowerTrench^® MOSFET
30V, 14A, 7.6mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(on) and fast switching speed.
Applications
„ Notebook CPU power supply
„ Synchronous rectifier
Features
„ Max r_DS(on) = 7.6mΩ, V_GS = 10V, I_D = 14A
„ Max r_DS(on) = 11.4mΩ, V_GS = 4.5V, I_D = 11.5A
„ High performance trench technology for extremely low
r_DS(on) and fast switching
„ Very low gate charge
„ High power and current handling capability
„ 100% R_G tested
„ RoHS Compliant
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Absolute Maximum Ratings T_A = 25°C unless otherwise Noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
T_J, T_STG Operating and Storage Temperature
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
(Note 1c)
Ratings
30
±20
14
100
210
2.5
1.2
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
(Note 1a)
50
(Note 1)
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS8690
Device
FDS8690
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS8690 Rev. B
www.fairchildsemi.com