FDS8672S Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel PowerTrench® SyncFET™ 30V, 18A, 4.8mΩ

December 2007
FDS8672S
tm
N-Channel PowerTrench^® SyncFET^™
30V, 18A, 4.8mΩ
Features
„ Max r_DS(on) = 4.8mΩ at V_GS = 10V, I_D = 18A
„ Max r_DS(on) = 7.0mΩ at V_GS = 4.5V, I_D = 15A
„ Includes SyncFET Schottky body diode
„ High performance trench technology for extremely low r_DS(on)
and fast switching
„ High power and current handling capability
„ 100% R_g (Gate Resistance) tested
„ Termination is Lead-free and RoHS Compliant
General Description
The FDS8672S is designed to replace a single MOSFET and
Schottky diode in synchronous DC/DC power supplies. This 30V
MOSFET is designed to maximize power conversion efficiency,
providing a low r_DS(on) and low gate charge. The FDS8672S
includes a patented combination of a MOSFET monolithically
integrated with a Schottky diode using Fairchild’s monolithic
SyncFET technology.
Application
„ Synchronous Rectifier for DC/DC Converters
„ Notebook Vcore low side switch
„ Point of load low side switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25°C
Power Dissipation
T_A = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
30
±20
18
80
216
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS8672S
Device
FDS8672S
Package
SO8
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
1
FDS8672S Rev.D2
www.fairchildsemi.com