FDS8670_06 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

August 2006
FDS8670
tm
30V N-Channel PowerTrench^® MOSFET
General Description
This device has been designed specifically to improve
the efficiency of DC-DC converters. Using new
techniques in MOSFET construction, the various
components of gate charge and capacitance have been
optimized to reduce switching losses. Low gate
resistance and very low Miller charge enable excellent
performance with both adaptive and fixed dead time
gate drive circuits. Very low Rds(on) has been
maintained to provide an extremely versatile device.
Applications
• High Efficiency DC-DC Converters:
• Notebook Vcore Power Supply
• Telecom Brick Synchronous Rectifier
• Multi purpose Point Of Load
Features
• 21 A, 30 V
Max R_DS(ON) = 3.7 mΩ @ V_GS = 10 V
Max R_DS(ON) = 5.0 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely low
R_DS(ON) and gate charge
• Minimal Qgd (5.5 nC typical)
• 100% R_G tested (0.9 Ω typical)
• RoHS Compliant
DD
D
D
SO-8
S ^{S SG}
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8670
FDS8670
13’’
5
4
6
3
7
2
8
1
Ratings
30
±20
21
105
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2005 Fairchild Semiconductor Corporation
FDS8670 Rev C (W)