FDS86540 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 mΩ

FDS86540
N-Channel PowerTrench^® MOSFET
60 V, 18 A, 4.5 mΩ
Features
„ Max r_DS(on) = 4.5 mΩ at V_GS = 10 V, I_D = 18 A
„ Max r_DS(on) = 5.4 mΩ at V_GS = 8 V, I_D = 16.5 A
„ High performance trench technologh for extremely low r_DS(on)
„ High power and current handing capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
May 2012
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r_DS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Primary Switch in isolated DC-DC
„ Synchronous Rectifier
„ Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
60
±20
18
120
194
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS86540
Device
FDS86540
Package
SO-8
Reel Size
13’’
Tape Width
12 mm
Quantity
2500 units
©2012 Fairchild Semiconductor Corporation
1
FDS86540 Rev. C
www.fairchildsemi.com