FDS8638 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 40 V, 18 A, 4.3 mΩ

FDS8638
N-Channel PowerTrench^® MOSFET
40 V, 18 A, 4.3 mΩ
Features
General Description
March 2009
„ Max r_DS(on) = 4.3 mΩ at V_GS = 10 V, I_D = 18 A
„ Max r_DS(on) = 5.4 mΩ at V_GS = 4.5 V, I_D = 16 A
„ High performance trench technology for extremely low r_DS(on)
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance Power Trench^® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
„ Synchronous Rectifier
„ Load Switch
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
40
±20
18
100
541
2.5
1
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS8638
Device
FDS8638
Package
SO-8
Reel Size
13 “
Tape Width
12 mm
Quantity
2500 units
©2009 Fairchild Semiconductor Corporation
1
FDS8638 Rev.C
www.fairchildsemi.com