FDS86242 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

August 2010
FDS86242
N-Channel PowerTrench^® MOSFET
150 V, 4.1 A, 67 mΩ
Features
General Description
„ Max r_DS(on) = 67 mΩ at V_GS = 10 V, I_D = 4.1 A
„ Max r_DS(on) = 98 mΩ at V_GS = 6 V, I_D = 3.3 A
„ High performance trench technology for extremely low r_DS(on)
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
Applications
„ DC/DC converters and Off-Line UPS
„ Distributed Power Architectures and VRMs
„ Primary Switch for 24V and 48V Systems
„ High Voltage Synchronous Rectifier
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_C = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
150
±20
4.1
20
40
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS86242
Device
FDS86242
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDS86242 Rev. C
www.fairchildsemi.com