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FDS86140 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 mΩ | |||
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March 2011
FDS86140
N-Channel PowerTrench® MOSFET
100 V, 11.2 A, 9.8 mΩ
Features
General Description
 Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A
 Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A
 High performance trench technologh for extremely low rDS(on)
 High power and current handing capability in a widely used
surface mount package
 100% UIL Tested
 RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductorâs advanced Power Trench® process that has
been optimized for rDS(on), switching performance and
ruggedness.
Applications
 DC/DC Converters and Off-Line UPS
 Distributed Power Architectures and VRMs
 Primary Swith for 24 V and 48 V Systems
 High Voltage Synchronous Rectifier
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1)
(Note 1a)
Ratings
100
±20
11.2
50
264
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
25
(Note 1a)
50
°C/W
Device Marking
FDS86140
Device
FDS86140
Package
SO-8
Reel Size
13ââ
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDS86140 Rev.C
www.fairchildsemi.com
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