FDS86106 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ

July 2011
FDS86106
N-Channel Power Trench^® MOSFET
100 V, 3.4 A, 105 mΩ
Features
General Description
„ Max r_DS(on) = 105 mΩ at V_GS = 10 V, I_D = 3.4 A
„ Max r_DS(on) = 171 mΩ at V_GS = 6 V, I_D = 2.7 A
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability in a widely used
surface mount package
„ 100% UIL Tested
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench^® process that has
been optimized for r_DS(on), switching performance and
ruggedness.
Applications
„ Synchronous Rectifier
„ Primary Switch For Bridge Topology
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
3.4
15
13
5.0
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
2.5
(Note 1a)
50
°C/W
Device Marking
FDS86106
Device
FDS86106
Package
SO-8
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
1
FDS86106 Rev. C2
www.fairchildsemi.com