FDS8447 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Single N-Channel PowerTrench MOSFET

November 2006
FDS8447
Single N-Channel PowerTrench^® MOSFET
tm
40V, 12.8A, 10.5mΩ
Features
„ Max r_DS(on) = 10.5mΩ at V_GS = 10V, I_D = 12.8A
„ Max r_DS(on) = 12.3mΩ at V_GS = 4.5V, I_D = 11.4A
„ Low gate charge
„ High performance trench technology for extremely low
r_DS(on)
„ High power and current handling capability
„ RoHS compliant
General Description
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench^®
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
Applications
„ DC - DC conversion
D
D
D
D
SO-8
Pin 1
G
S
S
S
D5
D6
D7
D8
4^G
3S
2^S
1S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
E_AS
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Drain-Source Avalanche Energy
Power Dissipation for Single Operation
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
R_θJA
R_θJC
Thermal Resistance-Single operation, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
(Note 1)
Device Marking
FDS8447
Device
FDS8447
Reel Size
13’’
Tape Width
12mm
Ratings
40
±20
12.8
50
150
2.5
1
-55 to 150
Units
V
V
A
mJ
W
°C
50
°C/W
25
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS8447 Rev. B
www.fairchildsemi.com