FDS8333C Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 30V N & P-Channel PowerTrench MOSFETs

August 2002
FDS8333C
30V N & P-Channel PowerTrench^® MOSFETs
General Description
These N & P-Channel MOSFETs are
produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
Features
• Q1 4.1 A, 30V. RDS(ON) = 80 mΩ @ VGS = 10 V
RDS(ON) = 130 mΩ @ VGS = 4.5 V
• Q2 –3.4 A, 30V. RDS(ON) = 130 mΩ @ VGS = –10 V
RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
• High power and handling capability in a widely used
surface mount package.
D^D1DD2DD2
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1
S1 S
S
S
Q2
5
4
6
3
Q1
7
2
8
1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
V GSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS8333C
FDS8333C
7’’
Q1
Q2
30
–30
±16
±20
4.1
–3.4
20
–20
2
1.6
1
0.9
–55 to +150
78
40
Units
V
A
W
°C
°C/W
Tape width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS8333C Rev C (W)