FDS7760A Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

February 2000
PRELIMINARY
FDS7760A
N-Channel Logic Level PowerTrench^® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• 15 A, 30 V. RDS(ON) = 5.5 mΩ @ VGS = 10 V
RDS(ON) = 8 mΩ @ VGS = 4.5 V.
• Low gate charge (37nC typical)
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON) .
• High power and current handling capability.
D
D
D
D
G
SO-8
SS
S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDS7760A
FDS7760A
13’’
5
6
7
8
Ratings
30
±20
15
60
2.5
1.2
1
-55 to +150
50
50 (10 sec)
30
Tape Width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
°C/W
Quantity
2500 units
1999 Fairchild Semiconductor Corporation
FDS7760A Rev. B (W)