FDS7082N3 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

February 2004
FDS7082N3
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced
SO8 FLMP package has been designed specifically to
improve the overall efficiency of DC/DC converters.
Providing a balance of low R_DS(ON) and Qg it is ideal for
synchronous rectifier applications in both isolated and
non-isolated topologies. It is also well suited for both
high and low side switch applications in Point of Load
converters.
Applications
• Secondary side Synchronous rectifier
• Synchronous Buck VRM and POL Converters
Features
• 17.5 A, 30 V R_DS(ON) = 6 mΩ @ V_GS = 10 V
R_DS(ON) = 8 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely
low R_DS(ON)
• Low Qg and Rg for fast switching
• FLMP SO-8 package for enhanced thermal
performance in an industry-standard package outline.
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7082N3
FDS7082N3
13’’
2004 Fairchild Semiconductor Corporation
Ratings
30
±20
17.5
60
3.0
1.5
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
FDS7082N3 Rev D1 (W)