FDS7064N7 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

February 2004
FDS7064N7
30V N-Channel PowerTrench^ MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R_DS(ON) in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 16.5 A, 30 V R_DS(ON) = 7.0 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
• Fast switching
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
DS ^D
DS
DS
DS
Bottomless
SO-8
Pin 1 SO-8
S_S ^{SS SS GG}
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7064N7
FDS7064N7
13’’
Ratings
30
± 12
16.5
60
3.0
–55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2004 Fairchild Semiconductor Corporation
FDS7064N7 Rev D1 (W)