FDS7064A Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET

May 2000
ADVANCE INFORMATION
FDS7064A
30V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low R_{DS( ON)} in a small package.
Applications
• Synchronous rectifier
• DC/DC converter
Features
• 19 A, 30 V R_DS(ON) = 6.5 mΩ @ V_GS = 4.5 V
• High performance trench technology for extremely
low R_DS(ON)
• High power and current handling capability
• Fast switching
• Bottomless™ SO-8 package: Enhanced thermal
performance in industry-standard package size
DS ^D
DS
DS
DS
Bottomless
SO-8
Pin 1 SO-8
S_S^{SS SSGG}
Bottom -sid e
Drain Con tact
5
4
6
3
7
2
8
1
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
P_D
T_J, T_STG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_{θJ A}
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7064A
FDS7064A
13’’
Ratings
30
±12
19
60
3.9
–55 to +175
38
1
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2000 Fairchild Semiconductor Corporation
FDS7064A Rev A1(W)