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FDS7060N7 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – 30V N-Channel PowerTrench MOSFET | |||
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May 2003
FDS7060N7
30V N-Channel PowerTrenchï MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
âlow sideâ synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
Applications
⢠Synchronous rectifier
⢠DC/DC converter
Features
⢠19 A, 30 V.
RDS(ON) = 5 m⦠@ VGS = 10 V
RDS(ON) = 7 m⦠@ VGS = 4.5 V
⢠High performance trench technology for extremely
low RDS(ON)
⢠High power and current handling capability
⢠Fast switching, low gate charge (35nC typical)
⢠FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
Bottom-side
5
Drain Contact
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS7060N7
FDS7060N7
13ââ
Ratings
30
± 20
19
60
3.0
â55 to +150
40
0.5
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
ï2002 Fairchild Semiconductor Corporation
FDS7060N7 Rev C1 (W)
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