FDS6993 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual P-Channel PowerTrench MOSFET

June 2003
FDS6993
Dual P-Channel PowerTrench^® MOSFET
General Description
These P-Channel MOSFETs are made
using FSC’s PowerTrench^® technology.
They are packaged in a single SO-8 which is
designed to allow two MOSFETs to operate
independenly, each with it’s own heat sink.
The combination of silicon and package
technologies results in minimum board
space and cost.
Features
• Q1: P-Channel
–4.3A, –30V R_DS(on) = 55mΩ @ V_GS = –10V
R_DS(on) = 85mΩ @ V_GS = –4.5V
• Q2: P-Channel
–6.8A, –12V R_DS(on) = 17mΩ @ V_GS = –4.5V
R_DS(on) = 24mΩ @ V_GS = –2.5V
R_DS(on) = 30mΩ @ V_GS = –1.8V
• High power and handling capability in a widely
used surface mount package
D^D2
D^D2
D^D1
D^D1
SO-8
Pin 1 SO-8
G2
S2 G
G1 S
S1 S
S
5
4
6
Q2
3
7
2
8
Q1
1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6993
FDS6993
13”
Q1
Q2
–30
–12
±25
±8
–4.3
–6.8
–20
–20
2
1.6
1
0.9
–55 to +150
78
40
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2003 Fairchild Semiconductor Corporation
FDS6993 Rev C (W)