FDS6990AS_08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual 30V N-Channel PowerTrench SyncFET

FDS6990AS
Dual 30V N-Channel PowerTrench^® SyncFET™
M
May 2008
Features
■ 7.5 A, 30 V. R_DS(ON) = 22 mΩ @ V_GS = 10 V
R_DS(ON) = 28 mΩ @ V_GS = 4.5 V
■ Includes SyncFET Schottky diode
■ Low gate charge (10nC typical)
■ High performance trench technology for extremely low
R_DS(ON)
■ High power and current handling capability
Applications
■ DC/DC converter
■ Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low R_DS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
D1
D1
D2
D2
SO-8
Pin 1
G1
S1
G2
S2
5
4
Q1
6
3
7
Q2
2
8
1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Package Marking and Ordering Information
Device Marking
FDS6990AS
Device
FDS6990AS
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
1
FDS6990AS Rev. A1
www.fairchildsemi.com