FDS6986S Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – Dual Notebook Power Supply N-Channel PowerTrench SyncFET™

September 2002
FDS6986S
Dual Notebook Power Supply N-Channel PowerTrench^ SyncFET^™
General Description
The FDS6986S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6986S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
• Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
7.9A, 30V
R_DS(on) = 20 mΩ @ V_GS = 10V
R_DS(on) = 28 mΩ @ V_GS = 4.5V
• Q1: Optimized for low switching losses
Low gate charge (6.5 nC typical)
6.5A, 30V
R_DS(on) = 29 mΩ @ V_GS = 10V
R_DS(on) = 38 mΩ @ V_GS = 4.5V
D
D
D
D
SO-8
Pin 1 SO-8
G
SS
S
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6986S
FDS6986S
13”
2002 Fairchild Semiconductor Corporation
Q2
5
4
6
3
7
Q1
2
8
1
Q2
Q1
30
30
±20
±16
7.9
6.5
30
20
2
1.6
1
0.9
-55 to +150
78
40
Units
V
V
A
W
°C
°C/W
°C/W
Tape width
12mm
Quantity
2500 units
FDS6986S Rev C1(W)